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3SK22

3SK22 DataSheet

Toshiba Semiconductor

3SK225 - Silicon N Channel Dual Gate MOS Type FET

 · 5 Hits ...
NEC

3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

 · 4 Hits • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Ty...
Toshiba

3SK22 - Silicon N-Channel Transistor

 · 4 Hits • High Power Gain : Gps =20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : |y fs | = 7ms (Ty...
NEC

3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

 · 3 Hits • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –...
NEC

3SK224 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

 · 2 Hits • Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKA...
Toshiba Semiconductor

3SK226 - Silicon N Channel Dual Gate MOS Type FET

 · 2 Hits ...
Hitachi Semiconductor

3SK228 - Silicon NPN Triple Diffused

 · 2 Hits 10 µA, VG2S = VDS = 0 I G2 = –10 µA, VG1S = VDS = 0 VG1S = –5 V, VG2S = VDS = 0 VG2S = –5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S...
Panasonic

3SK227 - Silicon N-Channel 4-pin MOSFET

 · 2 Hits 0.65±0.15 2.9±0.2 1.9±0.2 1.5 –0.3 0.65±0.15 1.1 –0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Sou...
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