3pF Datasheet | Specifications & PDF Download

STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET Features Type STN3PF06 ■ ■ ■ VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A

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Datasheet MM32L0xx 32­Bit Micro controller based on ARM® Cortex® M0 Version: 2.20_n MindMotion reserves the right to change the relevant information w

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NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt Features •ăLeadless SMD Pac

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Datasheet MM32W0xxBnc 32-bit Micro controller based on ARM Cortex M0 Ver: 1.81_n MindMotion reserves the right to change the relevant information with

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N3PF06 N3PF06 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.055 at VGS = - 10 V 0.065 at VGS = - 4.5 V

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2SCR513P FRA Middle Power Transistor (50V / 1A) Parameter VCEO IC Value 50V 1A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=350mV(Max.)

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www.dwo.net.cn Product Specification ❖ Product Name: AMOLED ❖ Model Name： DO0143PFST03 ❖ Description: 1.43 inch (466 x 466) Proposed by Designed

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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∗∗∗∗∗ C-MOS SCSI2 PROTOCOL-CONTROLLER -TOP VIEW MB86603PFV(1/4) IL16 132 130 NC NC 120 GND NC NC NC NC GND VDD (+5V) 110 NC NC NC GND NC 100 NC GND

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DATA SHEET 8G bits DDR2 Mobile RAM™ PoP (12mm × 12mm, 216-ball FBGA) EDB8164B3PF Specifications • Density: 8G bits • Organization — 2 pieces of 4Gb

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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FUJITSU SEMICONDUCTOR DATA SHEET DS04-21216-4E ASSP IF Band PLL Frequency Synthesizer MB15C103 s DESCRIPTION The Fujitsu MB15C103 is an exclusive I

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*********** BIPOLAR SOURCE VOLTAGE SUPERVISOR —TOP VIEW— 7 VS V REF 6 MB3773PF IL00 CT RESET IN 1 2 3 4 GND VCC (+3.5V to +18V) 8 RESET 7 VS IN

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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MITSUMI 4fsc Clock Generator MM1093 4fsc Clock Generator Monolithic IC MM1093 Outline This IC generates a clock used for driving the CCD that confi

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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FUJITSU SEMICONDUCTOR DATA SHEET DS04-21349-1E ASSP Single Serial Input PLL Frequency Synthesizer On-Chip prescaler MB15C03 s DESCRIPTION The Fuji

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