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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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TO-3PF 16A Triac TM1641B-L, TM1661B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger

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K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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2SCR513P FRA Middle Power Transistor (50V / 1A) Parameter VCEO IC Value 50V 1A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=350mV(Max.)

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SFH 203 P SFH 203 PFA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA

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STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET Features Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A ■ Ex

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RECTIFIER, up to 1kV, 3.25A, 300ns www.DataSheet4U.com 3PF8 3PF0 January 29, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com © 1

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RECTIFIER, up to 200V, 4A, 30ns 3PFT05 3PFT15 3PFT1 3PFT2 www.DataSheet4U.com January 7, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.se

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K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

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K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

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K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt Features •ăLeadless SMD Pac

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DATA SHEET 8G bits DDR2 Mobile RAM™ PoP (12mm × 12mm, 216-ball FBGA) EDB8164B3PF Specifications • Density: 8G bits • Organization — 2 pieces of 4Gb

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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