3pF datasheet | Specifications & PDF Download

ST3PF - Off delay relay

ST3PF ST3PF ST3PF，ST3PFT1 :41*60*84 : ，，。 : 1 ，ST3PFT1：2 :AC250V 3A() : AC380V 2S 5S 220V 10S 110V 30S DC24V ,DC12V :1S. 60S 1M 2M 10M

Rating: 1 ★ (12 votes)

Semtech Corporation

3PF0 - (3PF0 / 3PF8) RECTIFIE

RECTIFIER, up to 1kV, 3.25A, 300ns www.DataSheet4U.com 3PF8 3PF0 January 29, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com © 1

Rating: 1 ★ (7 votes)

STMicroelectronics

N3PF06 - STN3PF06

STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET Features Type STN3PF06 ■ ■ ■ VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A

Rating: 1 ★ (7 votes)

Gtvac

ST3PF - Time Relay

ST3PF、K、Y、R ST3PF、K、Y、R 、 ST3P ，、、、、、，，、。 ST3PF ： ST3PK ： ST3PY ： ST3PR ：、 ST3PF 4 3 2 1 5 6 7 8 ST3PK 4 3 2 1 5 6 7 8 AC110 AC200

Rating: 1 ★ (7 votes)

Sanken electric

TM1661B-L - TO-3PF 16A Triac

TO-3PF 16A Triac TM1641B-L, TM1661B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger

Rating: 1 ★ (6 votes)

Sanken electric

TM2561B-L - TO-3PF 25A Triac

TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger

Rating: 1 ★ (6 votes)

ETC

QL4016-3PF100M - 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM

QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

Rating: 1 ★ (6 votes)

Renesas Technology

H5N2803PF - Silicon N Channel MOS FET High Speed Power Switching

H5N2803PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0395-0100 Rev.1.00 Aug.05.2004 Features • Low on-resistance • Low leakage curren

Rating: 1 ★ (6 votes)

Samsung semiconductor

K4S56323PF-FHG - 2M x 32Bit x 4 Banks Mobile SDRAM

K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

Rating: 1 ★ (6 votes)

Samsung semiconductor

K4S56323PF-FHF - 2M x 32Bit x 4 Banks Mobile SDRAM

K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four bank

Rating: 1 ★ (6 votes)

Samsung semiconductor

K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM

K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

Rating: 1 ★ (5 votes)

Samsung semiconductor

K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

Rating: 1 ★ (5 votes)

Samsung semiconductor

K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

Rating: 1 ★ (5 votes)

Toshiba Semiconductor

TMP93PF76F - CMOS 16-Bit Microcontroller

TMP93PF76 CMOS 16-Bit Microcontroller TMP93PF76F 1. Outline and Feature The TMP93PF76F is a system evaluation LSI having a built in One-Time PROM (192

Rating: 1 ★ (5 votes)

ETC

QL4016-3PF144M - 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM

QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

Rating: 1 ★ (5 votes)

Samsung

K4M28163PF - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

Rating: 1 ★ (5 votes)

ETC