Datasheet4U Logo Datasheet4U.com

K4S56163PF-F1L

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF-F1L Datasheet (114.91 KB)

Preview of K4S56163PF-F1L PDF

Datasheet Details

Part number:

K4S56163PF-F1L

Manufacturer:

Samsung semiconductor

File Size:

114.91 KB

Description:

4m x 16bit x 4 banks mobile sdram in 54fbga.

K4S56163PF-F1L Features

* 1.8V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4S56163PF-F1L General Description

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

📁 Related Datasheet

K4S56163PF-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.

K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.

K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.

K4S561632A - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to.

K4S561632B - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to.

K4S561632C - 256Mbit SDRAM (Samsung)
.. K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics.

TAGS

K4S56163PF-F1L 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

Image Gallery

K4S56163PF-F1L Datasheet Preview Page 2 K4S56163PF-F1L Datasheet Preview Page 3

K4S56163PF-F1L Distributor