K4S56163PF-F90 Datasheet - Samsung semiconductor

K4S56163PF-F90, 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Details

Part number:

K4S56163PF-F90

Manufacturer:

Samsung semiconductor

File Size:

114.91 KB

Description:

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4S56163PF-R(B)G/F75 K4S56163PF-R(B)G/F90 K4S56163PF-R(B)G/F1L Max Freq. 133MHz(CL3), 83MHz(CL2) 111MHz(CL3), 83MHz(CL2) 111MHz(CL3)
* 1, 66MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)F : Low

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K4S56163PF-F90 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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