K4S56163PF Datasheet - Samsung semiconductor

K4S56163PF 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S56163PF Features

* 1.8V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4S56163PF_Samsungsemiconductor.pdf

K4S56163PF Datasheet Preview — Preview of K4S56163PF PDF

Datasheet Details

Part number:

K4S56163PF

Manufacturer:

Samsung semiconductor

File Size:

114.91 KB

Description:

4m x 16bit x 4 banks mobile sdram in 54fbga.

📁 Related Datasheet

K4S56163PF-F1L 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)

K4S56163PF-F90 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)

K4S56163PF-RG 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)

K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S561632C 256Mbit SDRAM (Samsung)

K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S561632E-NC60 SDRAM 256Mb E-die (Samsung semiconductor)

TAGS

K4S56163PF K4S56163PF 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

K4S56163PF Distributor