45N06 Datasheet | Specifications & PDF Download

ADV ADM45N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 40A RDS(ON) (mΩ) 18mΩ TO251 2 1 23 Absolute Maxim

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 18A G UIS, Rg 100% Tested

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ADV ADM45N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 46A RDS(ON) (mΩ) 18mΩ TO252 2 1 2 3 Absolute Maxi

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www.DataSheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Silicon N-Channel Power MOSFET ○R CS45N06 A4 anGeneral Description： CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high de

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S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDE

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RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 File Number 3574.4 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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www.DataSheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS co

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RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enh

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS =

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 6.5A G UIS, Rg 100% Tested

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www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9

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