45N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9

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Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 D

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 6.5A G UIS, Rg 100% Tested

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FD6M045N06 60V/60A Synchronous Rectifier Module March 2008 FD6M045N06 60V/60A Synchronous Rectifier Module General Features • Very High Rectificatio

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 18A G UIS, Rg 100% Tested

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Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 D

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www.DataSheet.co.kr IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 5

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TO-247-4L NTH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @

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NP45N06VDK 60 V – 45 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1295EJ0200 Rev.2.00 May 24, 2018 Description NP45N06VDK is

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S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDE

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RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 File Number 3574.4 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement

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www.DataSheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC

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www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9

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www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 6

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 File Number 3574.4 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement

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S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDE

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