45N06 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 D

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Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS =

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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ADV ADM45N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 40A RDS(ON) (mΩ) 18mΩ TO251 2 1 23 Absolute Maxim

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V

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Silicon N-Channel Power MOSFET ○R CS45N06 A4 anGeneral Description： CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high de

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applicatio

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NTB45N06L, NTBV45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel D2PAK Designed for low voltage, high speed switching applications in power

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NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applicatio

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NTB45N06, NTBV45N06 Power MOSFET 45 Amps, 60 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, con

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ADV ADM45N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 46A RDS(ON) (mΩ) 18mΩ TO252 2 1 2 3 Absolute Maxi

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TO-247-4L NTH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 18A G UIS, Rg 100% Tested

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Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 D

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