4N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 550mΩ(Max) ·Fast Sw

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Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel

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isc N-Channel MOSFET Transistor IXTY1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Di

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4N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better c

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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isc N-Channel MOSFET Transistor IXTP4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

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PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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isc N-Channel MOSFET Transistor IXTP14N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche volt

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Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel

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PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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SCT04N60P Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor IXTP1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA14N60P IXFP14N60P IXFH14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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