4N65 Datasheet | Specifications & PDF Download

CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RD

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ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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PFP4N65F / PFF4N65F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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650V N-Channel MOSFETs PDF04N65L General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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CYStech Electronics Corp. Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTN4N6

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LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated usi

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP34N65X2M D G S VDSS = ID25 =  RDS(on) 650V 34A 100m

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MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Characteristics Values Units IDS

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP34N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested

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HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate

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PFU4N65FG / PFD4N65FG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V ·Fast Switching Speed ·100% avalanche teste

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PFU4N65EG / PFD4N65EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/d

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi

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