4N65 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced u

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ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

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UNISONIC TECHNOLOGIES CO., LTD 4N65-C 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have bet

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www.vishay.com SiHG24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

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WFU4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R

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BRD4N65 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge,

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www.DataSheet.co.kr SAMWIN TO-220F TO-220 SW4N65 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC)

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UNISONIC TECHNOLOGIES CO., LTD 4N65-Q 4.0A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have b

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UNISONIC TECHNOLOGIES CO., LTD 4N65-U 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have be

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UNISONIC TECHNOLOGIES CO., LTD 4N65K-MK Preliminary 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65K-MK is a high voltage power MOSFET

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www.vishay.com SiHF074N65E Vishay Siliconix E Series Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

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N-Channel Super Junction Power MOSFET Ċ RM4N650T2 RM4N650HD RM4N650TI General Description The series of devices use advanced super junction technolo

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www.vishay.com SiHG24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °

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WFF4N65L Product Description Silicon N-Channel MOSFET Features � 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 10

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WFD4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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