5120 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a comple

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MOSFET – Power, Single, P-Channel, TSOP-6 -60 V, -2.9 A NTGS5120P, NVGS5120P Features • 60 V BVds, Low RDS(on) in TSOP−6 Package • 4.5 V Gate Rating

Rating: 1 ★ (6 votes)

WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK)

Rating: 1 ★ (6 votes)

C2D05120E 1200 V, 5 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • Zero forward recovery volt

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C2M0025120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance •

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C4D05120A 4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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MITSUBISHI LINEAR ICs MS1200P DUAL COMPARATOR DESCRIPTION The M51200P is a monolithic integrated circuit encapsulated in a 1O-Ieads flat plastic pac

Rating: 1 ★ (5 votes)

MITSUBISHI LINEAR ICs MS120SL VOLTAGE COMPARATOR DESCRIPTION The M51205L is a semiconductor integrated circuit consisting of precision voltage compa

Rating: 1 ★ (5 votes)

FFSP15120A — Silicon Carbide Schottky Diode FFSP15120A Silicon Carbide Schottky Diode 1200 V, 15 A Features • Max Junction Temperature 175 °C • Avala

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Rating: 1 ★ (5 votes)

SINGLE CHANNEL 0.7V DIFFERENTIALTO-LVTTL TRANSCEIVER ICS8512061I Features • • • • • • • • • One HCSL output pair and one LVCMOS/LVTTL output One sing

Rating: 1 ★ (5 votes)

DATA SHEET www.onsemi.com Ultra-Low VF Schottky Rectifier 15 A, 120 V FSV15120V Features • Ultra−Low Forward Voltage Drop • Low Thermal Resistance •

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E3M0075120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology •

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WNSC2M75120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode

Rating: 1 ★ (4 votes)

C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

Rating: 1 ★ (4 votes)

MITSUBISHI LINEAR ICs MS1201L VOL TAGE COMPARATOR DESCRIPTION The M51201 L is a semiconductor integrated circuit consisting of precision voltage com

Rating: 1 ★ (4 votes)

MITSUBISHI LINEAR ICs MS1203L VOLTAGE COMPARATOR DESCRIPTION The M51203L is a; semiconductor integrated circuit consisting of precision voltage comp

Rating: 1 ★ (4 votes)

MITSUBISHI LINEAR ICs MS1204L VOLTAGE COMPARATOR DESCRIPTION The M51204L is a semiconductor integrated circuit consisting of precision voitage compa

Rating: 1 ★ (4 votes)