PBSS5120T Datasheet - NXP

PBSS5120T 20 V/ 1 A PNP low VCEsat (BISS) transistor

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. *20 *1 *2 250 UNIT V A A mΩ * Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package providin.

PBSS5120T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative for MOSFETs in specific applications. A

PBSS5120T_PhilipsSemiconductors.pdf