PBSS5120T 20 V/ 1 A PNP low VCEsat (BISS) transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Sep 29 Philips Semiconduc.
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 20. 1. 2 250.

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Datasheet Specifications

Part number: PBSS5120T
Manufacturer: NXP ↗
File Size: 47.72 KB
Datasheet: PBSS5120T_PhilipsSemiconductors.pdf
Description: 20 V/ 1 A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to less heat generation
* Reduced printed-circuit board requirements

Applications

* APPLICATIONS
* Power management
* DC/DC conversion
* Supply line switching
* Battery charger
* LCD backlighting.
* Peripheral drivers
* Driver in low supply voltage applications (e. g. lamps and LEDs) handbook, halfpage PBSS5120T QUICK REFEREN

PBSS5120T Distributors

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PNP low VCEsat BISS transistor NXP

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