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PBSS5120T

20 V/ 1 A PNP low VCEsat (BISS) transistor

PBSS5120T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative for MOSFETs in specific applications. A

PBSS5120T General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

*20

*1

*2 250 UNIT V A A mΩ

* Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package providin.

PBSS5120T Datasheet (47.72 KB)

Preview of PBSS5120T PDF

Datasheet Details

Part number:

PBSS5120T

Manufacturer:

NXP ↗

File Size:

47.72 KB

Description:

20 v/ 1 a pnp low vcesat (biss) transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconduc.

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PBSS5120T PNP low VCEsat BISS transistor NXP

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