Datasheet Details
- Part number
- PBSS5130QA
- Manufacturer
- NXP ↗
- File Size
- 262.56 KB
- Datasheet
- PBSS5130QA_NXP.pdf
- Description
- PNP low VCEsat (BISS) transistor
PBSS5130QA Description
DF N1 01 PBSS5130QA 28 August 2013 0D -3 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.
PBSS5130QA Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) ar
PBSS5130QA Applications
* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collec
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