Datasheet Details
- Part number
- PBSS5130PAP
- Manufacturer
- NXP ↗
- File Size
- 270.83 KB
- Datasheet
- PBSS5130PAP_NXP.pdf
- Description
- PNP/PNP low VCEsat (BISS) transistor
PBSS5130PAP Description
PBSS5130PAP 12 December 2012 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.
PBSS5130PAP Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation
PBSS5130PAP Applications
* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = -1 A; IB =
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