* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual
PBSS5160DS Datasheet (171.25 KB)
PBSS5160DS
NXP ↗ Semiconductors
171.25 KB
60v 1a pnp/pnp low vcesat (biss) transistor.
PBSS5160DS
Rev. 03
* 9 October 2008
www.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Product data sheet
1. Product profile.
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