PBSS5160DS Datasheet, Transistor, NXP Semiconductors

PBSS5160DS Features

• Transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat gener

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PBSS5160DS

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NXP ↗ Semiconductors

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📄 Datasheet

Description:

60v 1a pnp/pnp low vcesat (biss) transistor. PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

PBSS5160DS Application

• Applications I Dual low power switches (e.g. motors, fans) I Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1

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PBSS5160DS

NXP Semiconductors

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