PBSS5160U Datasheet, transistor equivalent, NXP Semiconductors

PBSS5160U Features

• Transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat gener

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PBSS5160U

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NXP ↗ Semiconductors

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📄 Datasheet

Description:

60v 1a pnp low vcesat (biss) transistor. PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic pac

PBSS5160U Application

• Applications I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g

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PBSS5160U

NXP Semiconductors

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