* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS5160U Datasheet (157.38 KB)
PBSS5160U
NXP ↗ Semiconductors
157.38 KB
60v 1a pnp low vcesat (biss) transistor.
PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04
* 2 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 .
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