PBSS5130T - PNP Transistor

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PBSS5130T
Manufacturer	NXP Semiconductors
File Size	193.63 KB
Description	PNP Transistor
Datasheet	PBSS5130T Datasheet
Additional preview pages of the PBSS5130T datasheet.

Product details

Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 30 1 1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5130T Note 1. = p : made in Hong Kong = t : made in Malaysia = W : made in China. 3E Fig.1 Simplified outline (SOT23) and symbol.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to.

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Published: Mar 25, 2010 |