PBSS5130T - PNP Transistor
PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.
*30 *1 *1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.
Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5
PBSS5130T Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements
* Cost effective alternative to MOSFETS in specific applications.
