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PBSS5130T Datasheet - NXP Semiconductors

PBSS5130T PNP Transistor

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. *30 *1 *1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5.

PBSS5130T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETS in specific applications.

PBSS5130T_NXPSemiconductors.pdf

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Datasheet Details

Part number:

PBSS5130T

Manufacturer:

NXP ↗ Semiconductors

File Size:

193.63 KB

Description:

Pnp transistor.

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PBSS5130T PBSS5130T PNP Transistor NXP Semiconductors

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