Datasheet Details
- Part number
- PBSS5130T
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 193.63 KB
- Datasheet
- PBSS5130T_NXPSemiconductors.pdf
- Description
- PNP Transistor
PBSS5130T Description
DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product speciļ¬ca.
PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.
30.
1.
PBSS5130T Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements
PBSS5130T Applications
* APPLICATIONS
* Power management
* DC/DC converters
* Supply line switching
* Battery charger
* LCD backlighting.
* Peripheral drivers
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Inductive load driver (e. g. relay
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