PBSS5130T PNP Transistor

NXP Semiconductors

Description

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product speciﬁca.
PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 30. 1.

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Datasheet Specifications

Part number: PBSS5130T
Manufacturer: NXP ↗ Semiconductors
File Size: 193.63 KB
Datasheet: PBSS5130T_NXPSemiconductors.pdf
Description: PNP Transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements

Applications

* APPLICATIONS
* Power management
* DC/DC converters
* Supply line switching
* Battery charger
* LCD backlighting.
* Peripheral drivers
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Inductive load driver (e. g. relay

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PBSS5130T PNP Transistor NXP Semiconductors

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