PBSS5112PAP PNP/PNP low VCEsat (BISS) transistor

NXP

Description

PBSS5112PAP 30 November 2012 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.Product profile 1.1 General .
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

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Datasheet Specifications

Part number: PBSS5112PAP
Manufacturer: NXP ↗
File Size: 271.44 KB
Datasheet: PBSS5112PAP_NXP.pdf
Description: PNP/PNP low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High energy efficiency due to less heat generation

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol Per transistor VCEO IC ICM VEBO Per transistor RCEsat collector-emitter saturation resistance IC = -500

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PNP PNP low VCEsat BISS transistor NXP

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