PBSS5160V PNP low VCEsat (BISS) transistor

NXP

Description

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev.03 * 14 December 2009 Product data sheet 1.Product profile 1.1 General .
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

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Datasheet Specifications

Part number: PBSS5160V
Manufacturer: NXP ↗
File Size: 171.74 KB
Datasheet: PBSS5160V_NXP.pdf
Description: PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and

Applications

* Major application segments Automotive Telecom infrastructure Industrial
* Power management DC-to-DC conversion Supply line switching
* Peripheral driver Driver in low supply voltage applications (e. g. lamps and LEDs) Inductive load driver (e. g. relays, buzzers

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PBSS5160V PNP low VCEsat BISS transistor NXP

NXP PBSS5160V-like datasheet