52.00 Datasheet | Specifications & PDF Download

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ZMM5221B - ZMM5267B 500mW SURFACE MOUNT ZENER DIODE Features · 500mW Power Dissipation · Outline Similar to JEDEC DO-213AA · Hemetic Glass Package ·

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

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Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V

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NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （Ro

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UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fideli

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DATA SHEET www.onsemi.com Dual Port USB Type-C & PD Controller for Sink and DRP Applications FUSB15200 The FUSB15200 is a highly integrated dual port

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Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V

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