.
Toshiba
C5200 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
STMicroelectronics
2SC5200 - NPN Transistor
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.
Toshiba
2SC5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
Toshiba Semiconductor
2SC5200 - NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
INCHANGE
2SC5200 - NPN Transistor
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V.
WON-TOP
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EIC
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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A.
INCHANGE
BT152-600R - Thyristors
isc Thyristors INCHANGE Semiconductor BT152-600R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage .
Comset Semiconductors
BT152-600R - THYRISTORS
SEMICONDUCTORS BT152 Series THYRISTORS FEATURE Glass passivated thyristors in a plastic TO220 package. They are intended for use in applications req.
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
SemiWell Semiconductor
BT152-600 - Silicon Controlled Rectifiers
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JILIN SINO
2SC5200B - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application.
Zibo Seno
SR5200 - (SR520 - SR5200) 5.0 Amp Schottky Barrier Diode
Z ibo Seno Electronic Engineering Co., Ltd. SR520 – SR5200 5.0A SCHOTTKY BARRIER DIODE Features ! ! Schottky Barrier Chip Guard Ring Die Construction.
Toshiba
C5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
Micrel Semiconductor
MIC5200 - 100mA Low-Dropout Voltage Regulator Preliminary Information
MIC5200 Micrel MIC5200 100mA Low-Dropout Voltage Regulator Preliminary Information General Description The MIC5200 is an efficient linear voltage r.
UTC
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fideli.
Siemens
3UA5200-1J - Overload Relays
HP Rated Control Overload Relays______ ,!> f- rs Selection > HP Rated starters are priced and istocked less the overload relays. The overload rela.
Fairchild Semiconductor
2SC5200 - NPN Epitaxial Silicon Transistor
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.
Diodes
MBR5200 - HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART Pb MBR5200 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM (V) 200 IO (A) 5 VF (.
Pioneer
GM-5200T - BRIDGEABLE TWO-CHANNEL POWER AMPLIFIER SERVICE MANUAL
ORDER NO. CRT3560 BRIDGEABLE TWO-CHANNEL POWER AMPLIFIER GM-5200T GM-5200T /XU/EW /XU/UC GM-5200T/XU/ES GM-5200T/XU/CN This service manual shoul.
