52.00 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Integrated Circuit Systems, Inc. 400 MHz IF SAW Filter 160 KHz Bandwidth Part Number: SF0400BA02520S DESCRIPTION 400 MHz surfac

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DSTD5200 Pin out 2 Base Cathode Schottky Barrier Rectifier DSTD5200, 5A, 200V, TO-252 (single die) RoHS Pb Description Littelfuse DST series Ultra L

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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TC1N4148WT/TC1N4448WT/TC1N914BWT 1N4148WT 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package General Purpose Application Fast S

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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ZMM5221B - ZMM5267B 500mW SURFACE MOUNT ZENER DIODE Features · 500mW Power Dissipation · Outline Similar to JEDEC DO-213AA · Hemetic Glass Package ·

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.4V – 68V Nominal Zener Voltage  5% Standard Vz Tolerance  Ide

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® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.4V – 68V Nominal Zener Voltage  5% Standard Vz Tolerance  Ide

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SCOTTSDALE DIVISION 1N5221 thru 1N5281B, e3 DO-35 500 mW GLASS AXIAL-LEAD ZENER DIODES WWW.Microsemi .COM DESCRIPTION APPEARANCE The popular 1N52

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WeEn Semiconductors Thyristors Product specification BT152 series GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope, intended

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Features • Planar Die Construction • Dual Isolated Zeners in Ultra-Small Surface Mount Package • Ideally Suited for Automated Assembly Processes • Lea

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WESTCODE An IXYS Company Date:- 5 Apr, 2006 Data Sheet Issue:- 2 Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620 Absolute

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MCC Features
     omponents 21201 Itasca Street Chatsworth  # $ % # DL5221 THRU DL5281 5

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WILLAS ZMM5221B thru ZMM5267B 500mW Mini MELF Zener Diodes MINI-MELF/LL-34 Unit : inch (mm) Features D Plannar Die constuction SCS501V .063(1.6

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