52.00 Datasheet | Specifications & PDF Download

ZMM5221B - ZMM5267B 500mW SURFACE MOUNT ZENER DIODE Features · 500mW Power Dissipation · Outline Similar to JEDEC DO-213AA · Hemetic Glass Package ·

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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HA-5221 TM Data Sheet April 2000 File Number 2915.5 100MHz, Low Noise, Precision Operational Amplifier The HA-5221 is a single high performance di

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

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500mW Surface Mount Zener Diodes ZMM5221B – ZMM5267B 500mW Surface Mount Zener Diodes Features • • • • • • • • Planar Die Construction 500mW Power Dis

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Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V

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TC1N4148WT/TC1N4448WT/TC1N914BWT 1N4148WT 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package General Purpose Application Fast S

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TDA 5200 ASK Single Conversion Receiver Version 3.0 Data Sheet Revision 3.0, 2010-12-28 Wireless Components Edition 2010-12-28 Published by Infineon

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High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MBT35200MT1 Features • AEC−Q101 Qualified a

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www.fairchildsemi.com SPT5240 10-bit, 400 MWPS Current Output Digital-to-Analog Converter Features • 400 MWPS update rate • Complementary current out

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （Ro

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RTL8152B-VB-CG INTEGRATED 10/100M ETHERNET CONTROLLER FOR USB APPLICATIONS DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 1.0 21 March 201

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lo

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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APL5522 Dual-Channel, 3.3V/500mA and 2.5V/500mA Linear Regulator Features • Fixed Output Voltage : VOUT1=3.3V/500mA (within Maximum Power Dissipation

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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