551S Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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Low Skew 1 to 4 Clock Buffer 551S DATASHEET Description The 551S is a low cost, high-speed single input to four output clock buffer. The 551S has b

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C/A-551X, C/A-561X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristic

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Pulse I/F (DC power input) The 5-phase Stepping Set DP1 series DC24V/36V Micro-step (500 x 1 to 250 divisions) Configuration of the 5-phase Stepping

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www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.5 Ampere APPLICATION * * * * * Ultra h

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www.DataSheet4U.com ISSUED DATE :2004/09/20 REVISED DATE : GD551SD Description S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O

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This is the PDF file of catalog No.C31E-5. No.C31E5.pdf 00.4.14 On-Board Type (DC) www.DataSheet4U.com EMI Suppression Filter (EMIFIL®) EMI SUPPRE

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TD62551,553~555S TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62551S,TD62553S,TD62554S,TD62555S 4CH SINGLE DRIVER : COMMON EMITTER

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Pulse I/F (DC power input) The 5-phase Stepping Set DP2 series DC24V/36V Full-step/Half-step (500 x 1 divisions) (500 x 2 divisions) Configuration o

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551S Low Skew 1 to 4 Clock Buffer Datasheet The 551S is a low cost, high-speed single input to four output clock buffer with best in class additive

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Pulse I/F (AC power input) The 5-phase Stepping Set WP1 series AC100V/230V Micro-step (500 x 1 to 250 divisions) Configuration of the 5-phase Steppi

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www.DataSheet4U.com SPICE MODEL: DMMT5551 DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · · · · ·

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www.DataSheet4U.com ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S Description Features P N P E P I TA X I A L S I L I C O N T R A N S I S

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Data Sheet Schottky Barrier Diode RB551SS-30 lApplications General Rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05

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PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 – 2170 MHz Description The PXFC212551SC is a 240-watt LDMOS FET intended f

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2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005

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2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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C/A-551X, C/A-561X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristic

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