55N10 Datasheet | Specifications & PDF Download

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

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() CRSM055N10L2 SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excell

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Silicon N-Channel Power MOSFET ○R CS55N10 A4 General Description： CS55N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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FQP55N10 — N-Channel QFET® MOSFET FQP55N10 N-Channel QFET® MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is prod

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FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQPF55N10 August 2000 QFET FQPF55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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FQB55N10 / FQI55N10 August 2000 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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CYStech Electronics Corp. Spec. No. : C863J3 Issued Date : 2012.06.28 Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

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Silicon N-Channel Power MOSFET ○R CS55N10 A3 General Description： CS55N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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Silicon N-Channel Power MOSFET ○R CS55N10 A8-G General Description： CS55N10 A8-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high

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Silicon N-Channel Power MOSFET ○R CS55N10 A8 General Description： CS55N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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() CRSM055N10L4 SkyMOS4 N-MOSFET 100V, 4.8mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excell

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CYStech Electronics Corp. Spec. No. : C863Q8 Issued Date : 2012.12.13 Revised Date : 2016.08.10 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

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CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

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CYStech Electronics Corp. Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

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HRP55N10K HRP55N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Chara

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