INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

CYStech Electronics Corp. Spec. No. : C863Q8 Issued Date : 2012.12.13 Revised Date : 2016.08.10 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

Silicon N-Channel Power MOSFET ○R CS55N10 A4 General Description： CS55N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

FQP55N10 — N-Channel QFET® MOSFET FQP55N10 N-Channel QFET® MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is prod

() CRSM055N10L2 SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excell

HRP55N10K HRP55N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Chara

FQPF55N10 August 2000 QFET FQPF55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

Silicon N-Channel Power MOSFET ○R CS55N10 AQ3-G General Description： CS55N10 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi

() CRSM055N10L4 SkyMOS4 N-MOSFET 100V, 4.8mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excell

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

FQB55N10 / FQI55N10 August 2000 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

CYStech Electronics Corp. Spec. No. : C863J3 Issued Date : 2012.06.28 Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

FQB55N10 / FQI55N10 August 2000 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

CYStech Electronics Corp. Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

Silicon N-Channel Power MOSFET ○R CS55N10 A3 General Description： CS55N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den