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W29C020 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The devi

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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W29C020C 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The de

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W49F002U 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The de

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Preliminary W49V002A 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE GENERAL DESCRIPTION The W49V002A is a 2 -megabit, 3.3-volt only CMOS flash memory o

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K7N403601A K7N401801A www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision Hist

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K6F2008T2E Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision

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Preliminary W49F002A 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002A is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 b

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K6F4016U4G Family Preliminary CMwwOwS.DaStaSRheAet4MU.com Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision

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MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabric

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GS88018/32/36AT-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

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MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a fami Iy of 262 144-word by 1-bit dynamic

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M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC

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IS41C16257 IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and ou

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TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable

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