.
Motorola
MCM514256A - 256K x 4 CMOS DRAM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The MCM514256A is a 1.0µ CM.
Hi-TrendTechnology
HT6027 - high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X HT6X2X Tel: 021-51035886 Fax: 021-50277833 Email: sales@hitrendtech.com Web: http://www.hitrendtech.com http://www.hitrendtech.com （） Page.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
Simtek
STK14EC16 - 256Kx16 AutoStore nvSRAM
STK14EC16 Preliminary FEATURES • 15, 25, 45 ns Read Access and R/W Cycle Time • Unlimited Read/Write Endurance • Automatic Non-volatile STORE on Power.
Renesas
R1LV5256ESP-7SR - 256Kb Advanced LPSRAM
R1LV5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low volt.
IDT
IDT71258L - CMOS STATIC RAM 256K
FEATURES: • High-speed (equal access and cycle times) -Military - 45/55/70/85ns max. -Commercial - 35/45/55nOns max. • Low-power operation -IDT71258S .
AMIC Technology
A67L73321 - 256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
A67L83161/A67L83181/ A67L73321/A67L73361 Series 256K X 16/18, 128K X 32/36 Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Flow-through D.
Siemens Semiconductor Group
HYB314265BJ-50 - 256K x 16-Bit EDO-Dynamic RAM
256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organizati.
ETC
FM18L08-70-P - 256Kb 2.7-3.6V Bytewide FRAM Memory
Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data.
STMicroelectronics
M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:.
STMicroelectronics
M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .
Macronix International
IMX29F002 - 2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum.
Samsung semiconductor
K7B803625B - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0.
Motorola
MCM72CB32 - 256KB and 512KB BurstRAM Secondary Cache Module
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM72CB32/D 256KB and 512KB BurstRAM™ Secondary Cache Module for Pentium™ The MCM72CB3.
NMB Technologies
AAA1M304 - Fast Page Mode CMOS 256K x 4 DRAM
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .
Mosel-Vitelic
MS621002 - 256K x 4 CMOS Static RAM
www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
