5812-F Datasheet | Specifications & PDF Download

PE58120P N-Channel Enhancement Mode Power MOSFET Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charg

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ISL58125 c1No-8nO8ta8Rc-IEtNCoOTOuEBrMRSTSMOeIcELLhENonTDriEcEwaDPwl RSRwOuE.ipDnPpUtLeoACrrstCTiClE.ceMonEmteN/rtTsact Dual-Channel Laser Diode Dri

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NTE5812 thru NTE5817 6 Amp Plastic Silicon Rectifier Features: D Diffused Junction D High Surge Capability D Completely Insulated Case D Uniform Molde

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PCS3P25811 and PCS3P25812 and PCS3P25814 Spread Spectrum Clock Generator www.DataSheet4U.com Features • Generates a 1x (PCS3P25811), 2x (PCS3P25812)

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PE58120G N-Channel Enhancement Mode Power MOSFET Description The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charg

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Features • High FSK Sensitivity: –106 dBm at 20 Kbit/s/–109.5 dBm at 2.4 Kbit/s (433.92 MHz) • High ASK Sensitivity: –112.5 dBm at 10 Kbit/s/–116.5 dB

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Semiconductor HI5812 CMOS 20 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold Description The HI5812 is a fast, low power, 12

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CY25811/12/14 Spread Spectrum Clock Generator Spread Spectrum Clock Generator Features ■ 4 to 32 MHz input frequency range ■ 4 to 128 MHz output freq

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TRANSFORMERS FOR DIGITAL AUDIO DATA TRANSMISSION For Use with Cirrus Logic’s CS8401, CS8402, CS8403 & CS8404 ICs Operating transmission rates: 1 to 7

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Magellan™ Motion Processor MC58000 Electrical Specification for Brushed Servo, Brushless Servo, Microstepping and Stepping Motion Control Preliminary

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Ferrites and accessories RM 8, RM 8 LP Core and accessories Series/Type: Date: B65811, B65812 October 2022 TDK Electronics AG 2022. Reproduction

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MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =

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Ordering number : ENN7998 MCH5812 www.DataSheet4U.com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Pu

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12A 5V/12V Step-Down Converter EM5812/A General Description EM5812/A is a synchronous rectified PWM controller with a built in high-side power MOSF

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MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz

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MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =

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AL5812 60V, 150mA ADJUSTABLE LINEAR LED DRIVER Description The AL5812 is an adjustable Linear LED driver offering excellent temperature stability and

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Ordering number : ENA1417B LC75812PT CMOS IC 1/8, 1/9 Duty Dot Matrix LCD Display Controllers/Drivers with Key Input Function http://onsemi.com Ove

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AMS 5812 Amplified pressure sensor with analog and digital output (I²C) FEATURES • Amplified, calibrated and temperature compensated pressure sensor

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