5N50C Datasheet | Specifications & PDF Download

FQD5N50C / FQU5N50C October 2008 QFET ® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field

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Description AP5N50CD 500V N-Channel Enhancement Mode MOSFET The AP5N50CD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned p

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FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field e

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Shanghai Jin-ec Electronic&Technology Co., Ltd N N-CHANNEL MOSFET JHW5N50 Package MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.

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FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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N R N-CHANNEL MOSFET JCS5N50VT/RT/CT/FT MAIN CHARACTERISTICS Package ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.6Ω Qg 15 nC z z z UPS APPLICA

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FQB5N50C — N-Channel QFET® MOSFET FQB5N50C N-Channel QFET® MOSFET 500 V, 5 A, 1.4 Ω November 2013 Features • 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ V

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs www.DataSheet4U.com Features • 15A

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FQPF5N50CF 500V N-Channel MOSFET FRFET FQPF5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical

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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High fr

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MOT5N50C/MOT5N50D N-CHANNEL MOSFET „ MOT5N50C/D PRODUCT CHARACTERISTICS Symbol VDSS RDS(on)typ(@VGS =10 V) Qg@type 500V 1.2Ω 24nC 2.Drain ID 5A

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FQB5N50CF 500V N-Channel MOSFET May 2006 FRFET FQB5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge (

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P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (T

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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High fr

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 1.85Ω ID 5A G UIS, 100% Tested S

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FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field e

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FQU5N50CTU-WS — N-Channel QFET® MOSFET FQU5N50CTU-WS N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V

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FQB5N50C/FQI5N50C QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors ar

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

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