5N60C Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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FQP5N60C/FQPF5N60C QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI15N60C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconduc

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FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET FQD5N60C / FQU5N60C N-Channel QFET® MOSFET 600 V, 2.8 A, 2.5 Ω Features • 2.8 A, 600 V, RDS(on) = 2.5 Ω

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FQP5N60C / FQPF5N60C — N-Channel QFET® MOSFET FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω December 2013 Description This N-Chan

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C / FQU5N60C Features • 2.8 A, 600 V,

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Shanghai Jin-ec Electronic& Technology Co., Ltd JHW5N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID  A VDSS 600 V

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N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson（@Vgs=10V） 0.52 Ω Qg 36.0 nC z z z UPS APPLICATIONS z

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N R N-CHANNEL MOSFET JCS5N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.5Ω Qg 9nC    LED APPLICATIONS  High fr

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt ra

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Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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SLP5N60C / SLF5N60C SLP5N60C / SLF5N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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SLP5N60C / SLF5N60C SLP5N60C / SLF5N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested

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