5N60C Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt ra

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FQP5N60C / FQPF5N60C — N-Channel QFET® MOSFET FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω December 2013 Description This N-Chan

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5A, 600V N-CHANNEL MOSFET SVF5N60CF/D/T_Datasheet GENERAL DESCRIPTION SVF5N60CF/D/T is an N-channel enhancement mode power MOS field effect transist

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www.DataSheet4U.com CoolMOS Power MOSFET IXKN 75N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS(on) 35 mΩ Pr

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω November 2013 Features • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.)

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FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Features • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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SPI15N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge

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N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson（@Vgs=10V） 0.52 Ω Qg 36.0 nC z z z UPS APPLICATIONS z

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SJTD05N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.72Ω ID 5A Featu

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW15N60CFD ISPW15N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤330mΩ ·Enhance

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari

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Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH75N60C3 VCES = IC110 = V ≤ C

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