6-CHANNEL Datasheet | Specifications & PDF Download

Power MOSFETS DATASHEET LM30074NAI8A N-Channel Enhancement Mode MOSFET Leadpower-semiconductor Corp., Ltd sales@leadpower-semi.com (03) 6577339 FAX：(

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Single Channel Operational Amplifier LM321 LM321 is a general purpose, single channel op amp with internal compensation and a true differential input

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applica

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® RT8249A/B/C Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs General Description The RT8249A/B/C is a dual-channel step-down,

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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Click here for production status of specific part numbers. MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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RJK0822SPN-VB RJK0822SPN-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Sw

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P-Channel JFET Switch CORPORATION J174 – J177 / SST174 – SST177 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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