60N08 Datasheet | Specifications & PDF Download

() CRST060N08N3,CRSS057N08N3 SkyMOS3 N-MOSFET 80V, 5mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(o

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc

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N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC  DC/DC    APP

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary 60 Amps, 80 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N08 is an N-channel power MOSFET

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isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo

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N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC  DC/DC    APP

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HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature  80V/105A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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FMW60N088S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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FMP60N088S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature  80V/105A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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FMV60N088S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature  80V/80A RDS(ON)=5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU60N08 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID

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HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature  80V/80A RDS(ON)=5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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