UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary.
UTC
60N08 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary 60 Amps, 80 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N08 is an N-channel power MOSFET.
CR Micro
CRST060N08N3 - SkyMOS3 N-MOSFET
() CRST060N08N3,CRSS057N08N3 SkyMOS3 N-MOSFET 80V, 5mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(o.
Fairchild Semiconductor
FQA160N08 - 80V N-Channel MOSFET
FQA160N08 — N-Channel QFET® MOSFET FQA160N08 N-Channel QFET® MOSFET 80 V, 160 A, 7 mΩ June 2014 Description Features This N-Channel enhancement m.
RICOH electronics devices division
R1160N081A-TR - SOT23-5 3-MODE 200mA LDO REGULATOR
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Vishay Siliconix
SUM60N08-07T - N-Channel MOSFET
www.DataSheet4U.com SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) .
Vishay Siliconix
SUM60N08-07C - N-Channel 75-V (D-S) MOSFET
SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.DataSheet4U.net 75 (V) rDS(on) (W.
INCHANGE
IXTA160N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.
JILIN SINO
AJCS160N08I - N-CHANNEL MOSFET
N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC DC/DC APP.
JILIN SINO
AJCS160N08 - N-CHANNEL MOSFET
N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC DC/DC APP.
JCET
CJU60N08 - N-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU60N08 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID.
RICOH electronics devices division
R1160N081A - SOT23-5 3-MODE 200mA LDO REGULATOR
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RICOH electronics devices division
R1160N081B - SOT23-5 3-MODE 200mA LDO REGULATOR
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RICOH electronics devices division
R1160N081B-TR - SOT23-5 3-MODE 200mA LDO REGULATOR
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CDE
382L472M160N082 - High Capacitance
Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito.
IXYS
IXTQ160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
IXYS
IXTA160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
IXYS
IXTP160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
Infineon
IPB160N08S4-03 - Power-Transistor
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.