60N08 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary 60 Amps, 80 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N08 is an N-channel power MOSFET

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N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC  DC/DC    APP

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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N N-CHANNEL MOSFET AJCS160N08I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 160A 80V 5.5mΩ 133nC  DC/DC    APP

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www.DataSheet4U.com SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V)

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isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo

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isc N-Channel MOSFET Transistor IXTP160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc

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() CRST060N08N3,CRSS057N08N3 SkyMOS3 N-MOSFET 80V, 5mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(o

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FMV60N088S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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FQA160N08 — N-Channel QFET® MOSFET FQA160N08 N-Channel QFET® MOSFET 80 V, 160 A, 7 mΩ June 2014 Description Features This N-Channel enhancement m

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SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.DataSheet4U.net 75 (V) rDS(on) (W

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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