* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99347(02/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g
IXTQ160N085T Datasheet (131.25 KB)
IXTQ160N085T
IXYS
131.25 KB
Power mosfet.
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
.
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