IXTQ16N50P Datasheet - IXYS

IXTQ16N50P PolarHV Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mount.

IXTQ16N50P Features

* z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and

IXTQ16N50P_IXYS.pdf