Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5
IXTH160N10T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ160N10T, IXTH160N10T
Manufacturer:
IXYS Corporation
File Size:
181.35 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ160N10T, IXTH160N10T.
Please refer to the document for exact specifications by model.