Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
IXTH160N075T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ160N075T, IXTH160N075T
Manufacturer:
IXYS Corporation
File Size:
178.79 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ160N075T, IXTH160N075T.
Please refer to the document for exact specifications by model.