64-MBit Datasheet | Specifications & PDF Download

MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

Rating: 1 ★ (8 votes)

SST26VF064B / SST26VF064BA 2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V or 2.

Rating: 1 ★ (6 votes)

www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

Rating: 1 ★ (6 votes)

CY7C2642KV18/CY7C2644KV18 144-Mbit QDR® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT 144-Mbit QDR® II+ SRAM Two-Word Burst

Rating: 1 ★ (5 votes)

IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals r

Rating: 1 ★ (5 votes)

K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

Rating: 1 ★ (5 votes)

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V

Rating: 1 ★ (5 votes)

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

Rating: 1 ★ (5 votes)

IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draf

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IC42S32202/L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draft Draft D

Rating: 1 ★ (5 votes)

S25FL512S 512 Mbit (64 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Da

Rating: 1 ★ (5 votes)

CY7C10212CV33 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features ■ Temperature ranges ❐ Automotive-E: –40 °C to 125 °C ■ Pin and fu

Rating: 1 ★ (4 votes)

CY7C2642KV18/CY7C2644KV18 144-Mbit QDR® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT 144-Mbit QDR® II+ SRAM Two-Word Burst

Rating: 1 ★ (4 votes)

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional

Rating: 1 ★ (4 votes)

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional

Rating: 1 ★ (4 votes)

M27V102 1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION: – A

Rating: 1 ★ (4 votes)

M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

Rating: 1 ★ (4 votes)

K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

Rating: 1 ★ (4 votes)

K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c

Rating: 1 ★ (4 votes)

K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to

Rating: 1 ★ (4 votes)