6509 Datasheet | Specifications & PDF Download

isc Thyristors 2N6509G APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor c

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Thyristors Silicon Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as

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R6509KND3 Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Par

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6509A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are mu

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isc Thyristors INCHANGE Semiconductor 2N6509 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crow

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isc N-Channel MOSFET Transistor R6509KNJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode

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isc N-Channel MOSFET Transistor R6509KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta

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isc N-Channel MOSFET Transistor R6509ENX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car

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2N6504 Series Preferred Device www.DataSheet4U.com Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac con

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VDS 900 V E3M0065090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 36 A RDS(on) 65 mΩ N-Channel Enhancement Mode

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μPD46365084B μPD46365094B μPD46365184B μPD46365364B Datasheet 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0090EJ0400 Rev.4.00 Nov 09 2012 De

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R6509ENJ 　　Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel

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MAX6509/MAX6510 Resistor-Programmable SOT Temperature Switches General Description The MAX6509/MAX6510 are fully integrated, resistorprogrammable te

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C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe

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isc N-Channel MOSFET Transistor R6509ENJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER:

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