6N50 Datasheet | Specifications & PDF Download

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect

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UNISONIC TECHNOLOGIES CO., LTD 06N50-CB 0.6A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 06N50-CB is a high voltage power MOSFET and is designe

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FDD6N50F — N-Channel UniFETTM FRFET® MOSFET FDD6N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 5.5 A, 1.15 Ω November 2013 Features • RDS(on) = 950 m

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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6N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary 6A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N50 is a N-channel mode power MOSFET using U

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N50 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltag

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FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10

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HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDM

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UNISONIC TECHNOLOGIES CO., LTD 16N50 16A, 500V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC’s ad

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :

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FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features • RDS(on) = 900 mΩ (Max.) @ VGS

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TSA16N50M TSA16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET

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TSF16N50MR TSF16N50MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog

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MDQ16N50G N-Channel MOSFET 500V MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35Ω General Description These N-channel MOSFET are produced using advanced

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