6N50 Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 D VDSX = ID(on) >  RDS(on) 500V 6A 550m TO-263 AA (IXTA) Symbol VDSX VGSX VGSM

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect

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PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS =

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Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditio

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intri

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrins

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UNISONIC TECHNOLOGIES CO., LTD 16N50 16A, 500V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC’s ad

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HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:

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PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 D VDSX = ID(on) >  RDS(on) 500V 6A 550m TO-263 AA (IXTA) Symbol VDSX VGSX VGSM

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www.DataSheet4U.com NTP6N50 Preferred Devices Product Preview Power MOSFET 6 Amps, 500 Volts N–Channel TO–220 Designed for high voltage, high speed

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VD

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(o

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IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 36N50P IXFR 36N50P VDSS ID25 (Electrically Isolated Back Su

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