7N10 Datasheet | Specifications & PDF Download

IPB017N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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BSC027N10NS5 MOSFET OptiMOSTM Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Super

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Public IPT017N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑Channel

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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Public IPT017N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑res

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H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

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UNISONIC TECHNOLOGIES CO., LTD 7N100-C 7A, 1000V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 7N100-C provide excellent RDS(ON), low ga

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Public IPTC017N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑re

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltag

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UNISONIC TECHNOLOGIES CO., LTD 7N10 7.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, provid

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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() CRSQ027N10N SkyMOS1 N-MOSFET 100V, 2.6mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excell

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() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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FQD7N10L / FQU7N10L December 2000 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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FQT7N10L May 2001 QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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UNISONIC TECHNOLOGIES CO., LTD 7N10Z 7A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providi

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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IPB027N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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FQPF7N10 December 2000 QFET FQPF7N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

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