7N10 Datasheet | Specifications & PDF Download

IPB017N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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Public IPTC017N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑re

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() CRST037N10N3,CRSS035N10N3 SkyMOS3 N-MOSFET 100V, 3mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(

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H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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www.DataSheet.co.kr IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO26

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Silicon N-Channel Power MOSFET ○R CS7N10 AQ2-1 General Description： CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high

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Silicon N-Channel Power MOSFET ○R CS17N10 A3 General Description： CS17N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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