7N10 Datasheet | Specifications & PDF Download

IPB017N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 1.7 mW, 268 A FDB1D7N10CL7 Description This N−Channel MOSFET is produced using onsemi’s advanced P

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltag

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on

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DATA SHEET www.onsemi.com MOSFET - Power, Dual N-Channel 100 V, 26 mW, 28 A NVMFD027N10MCL Features • Small Footprint (5x6 mm) for Compact Design •

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() CRSQ027N10N SkyMOS1 N-MOSFET 100V, 2.6mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excell

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Public IPTC017N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑re

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247

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MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 mW, 265 A NVBLS1D7N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitan

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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FQT7N10L May 2001 QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 mW, 272 A NTBLS1D7N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitan

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Silicon N-Channel Power MOSFET ○R CS17N10 A4 General Description： CS17N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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Public IPT017N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑res

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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