7NM60-Q Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor STD7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor STF7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0

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www.DataSheet4U.com STW47NM60 N-CHANNEL 600V - 0.075Ω - 47A TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STW47NM60 VDSS 600V RDS(on) < 0.09Ω Rds(on)

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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data

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STP7NM60N Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFET in a TO‑220 package Features TAB Order code VDS RDS(on) max. ID Pa

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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data

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isc N-Channel MOSFET Transistor STU7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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UNISONIC TECHNOLOGIES CO., LTD 7NM60 7A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 7NM60 is a high voltage super junction MOSFET and

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STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0

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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data

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STW47NM60ND Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet - production

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STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datash

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STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datash

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isc N-Channel MOSFET Transistor STP7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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UNISONIC TECHNOLOGIES CO., LTD 7NM60-Q Preliminary 7.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 7NM60-Q is a Super Junction MO

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