Micron Technology
MT49H8M36 - 8 Meg x 36 x 8 Banks CIO RLDRAM 2
CIO RLDRAM 2
MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks
288Mb: x9, x18, x36 CIO RLDRAM 2 Fe
(67 views)
A-Data Technology
ADS8608A8A-75 - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(18 views)
A-Data Technology
ADS8616A8A-75A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(18 views)
A-Data Technology
ADS8608A8A - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(17 views)
A-Data Technology
ADS8616A8A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(17 views)
A-Data Technology
ADS8616A8A-75 - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(17 views)
A-Data Technology
VDS7608A4A - Synchronous DRAM (4M x 8 Bit x 4 Banks)
V-Data
Synchronous DRAM
VDS7608A4A 4M x 8 Bit x 4 Banks
General Description
The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo
(17 views)
A-Data Technology
ADS7608A4A - Synchronous DRAM(4M X 8 Bit X 4 Banks)
A-Data
Synchronous DRAM
ADS7608A4A 4M x 8 Bit x 4 Banks
General Description
The ADS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo
(16 views)
A-Data Technology
ADS7616A4A - Synchronous DRAM(2M X 16 Bit X 4 Banks)
A-Data
Synchronous DRAM
ADS7616A4A 2M x 16 Bit x 4 Banks
General Description
The ADS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo
(16 views)
A-Data Technology
ADS8608A8A-75A - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(15 views)
Winbond
W9412G6IH - 2M X 4 BANKS X 16 BITS DDR SDRAM
www.DataSheet.co.kr
W9412G6IH 2M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(14 views)
Winbond
W9712G6KB - 2M x 4-BANKS x 16-BIT DDR2 SDRAM
W9712G6KB
2M 4 BANKS 16 BIT DDR2 SDRAM
Table of Contents-
1.
GENERAL DESCRIPTION
(14 views)
Winbond
W9825G6KH - 4M x 4-BANKS x 16-BITS SDRAM
W9825G6KH
4 M 4 BANKS 16 BITS SDRAM
Table of Contents-
1.
GENERAL DESCRIPTION
(13 views)
TMT
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm
• • • • •
TE CH
T431616C
SDRAM
FEATURES
3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add
(13 views)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
(12 views)
Samsung semiconductor
K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Electronics reserves the right to
(12 views)
Samsung semiconductor
K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Electronics reserves the right to
(12 views)
Samsung semiconductor
K4S51323PF-MEF - 4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-M(E)F
4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c
(12 views)
ISSI
IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E
4M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou
(11 views)
ISSI
IS45VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
(11 views)
