A-Data Technology
ADS8608A8A-75A - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(12 views)
A-Data Technology
ADS8616A8A-75 - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(12 views)
Sanyo
LC382161T-17 - 2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
(11 views)
A-Data Technology
ADS8608A8A - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(10 views)
A-Data Technology
ADS8608A8A-75 - Synchronous DRAM(8M X 8 Bit X 4 Banks)
(10 views)
A-Data Technology
ADS8616A8A-75A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(9 views)
A-Data Technology
VDS7608A4A - Synchronous DRAM (4M x 8 Bit x 4 Banks)
V-Data
Synchronous DRAM
VDS7608A4A 4M x 8 Bit x 4 Banks
General Description
The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo
(9 views)
A-Data Technology
ADS8616A8A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(8 views)
Samsung semiconductor
K4S280832A - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832A
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to
(7 views)
ESMT
M12L64322A-5TG2S - 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(7 views)
Hynix Semiconductor
HY57V56820BLT - 4 Banks x 8M x 8Bit Synchronous DRAM
www.DataSheet4U.com
HY57V56820B(L)T
4 Banks x 8M x 8Bit Synchronous DRAM
DESCRIPTION
The HY57V56820B is a 268,435,456bit CMOS Synchronous DRAM, ideal
(6 views)
ESMT
M12L128168A-5TG2S - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(5 views)
ESMT
M12L64164A-5TG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(4 views)
Hynix Semiconductor
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG
4 Banks x 1M x 16Bit Synchronous DRAM
D E S C R IP T IO N
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui
(4 views)
ISSI
IS42VS16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F
512K Words x 16 Bits x 2 Banks 16Mb SDRAM
JUNE 2012
FEATURES
• Clock frequency:
IS42/45S16100F: 200, 166, 143 MHz
(4 views)
ISSI
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
(4 views)
Hynix Semiconductor
HY57V56820CLT - 4 Banks x 8M x 8Bit Synchronous DRAM
www.DataSheet4U.com
HY57V56820C(L)T
4 Banks x 8M x 8Bit Synchronous DRAM
DESCRIPTION
The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideal
(4 views)
Samsung semiconductor
K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M28163LF - R(B)E/N/S/C/L/R
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. •
(4 views)
Integrated Silicon Solution
IS42VS16400C1 - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
FEATURES
• Clock frequency: 100, 83, 66 MHz • Fully synchronous; all si
(4 views)
ISSI
IS42SM32100D - 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42/45SM/RM/VM32100D
512K x 32Bits x 2Banks Low Power Synchronous DRAM
Description
These IS42SM/RM/VM32100D are low power 33,554,432 bits CMOS Synch
(4 views)
