UNISONIC TECHNOLOGIES CO., LTD 82NXX VOLTAGE DETEC.
UTC
82N10 - VOLTAGE DETECTORS
UNISONIC TECHNOLOGIES CO., LTD 82NXX VOLTAGE DETECTORS 3 CMOS IC 3 DESCRIPTION The UTC 82NXX series are highly precise, low power consumption volt.
Infineon
IPP082N10NF2S - MOSFET
IPP082N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
SemiHow
HRS82N10K - N-Channel MOSFET
HRS82N10K HRS82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Chara.
Infineon Technologies
IPB082N10N3G - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.
Infineon Technologies
IPP082N10N3G - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.
SemiHow
HRP82N10K - N-Channel MOSFET
HRP82N10K HRP82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Chara.
SemiHow
HRW82N10K - N-Channel MOSFET
HRW82N10K_HRI82N10K HRW82N10K / HRI82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Exc.
SemiHow
HRI82N10K - N-Channel MOSFET
HRW82N10K_HRI82N10K HRW82N10K / HRI82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Exc.
Infineon Technologies
IPD082N10N3G - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.
Infineon Technologies
IPI082N10N3G - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.
SemiHow
HRA82N10K - N-Channel MOSFET
HRA82N10K HRA82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Chara.
Hunteck
HGP082N10M - 100V N-Ch Power MOSFET
HGP082N10M Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Test.
Infineon
IPD082N10N3 - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellen.
INCHANGE
IPD082N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanc.