Hynix Semiconductor
HY27US161G1M - 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27US081G1M HY27US161G1M
This document is a general pr
(19 views)
ISSI
IS46DR81280DL - 128Mx8 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(18 views)
Hynix Semiconductor
HY27UF081G2A - 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27UF081G2A HY27UF161G2A
This document is a general product descri
(17 views)
Hynix Semiconductor
HY27UF161G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(15 views)
Samsung semiconductor
KM23C64000T - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
KM23C64000T
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access ti
(14 views)
ISSI
IS43DR81280DL - 128Mx8 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(14 views)
Hynix Semiconductor
HY27UF081G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(12 views)
Samsung semiconductor
K3P7U1000B-YC - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
K3P7V(U)1000B-YC
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast acce
(12 views)
ISSI
IS43DR81280D - 128Mx8 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(12 views)
Samsung semiconductor
K3P7V1000B-YC - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
K3P7V(U)1000B-YC
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast acce
(11 views)
ISSI
IS46DR81280D - 128Mx8 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(11 views)
Hynix Semiconductor
HY57V658011 - 8Mx8 bit Synchronous DRAM Series
(10 views)
Hynix Semiconductor
HY57V658021 - 8Mx8 bit Synchronous DRAM Series
(10 views)
Hynix Semiconductor
HY27UA161G1M - (HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Mem
(10 views)
ETC
AS4LC4M16S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 wor
(9 views)
Hynix Semiconductor
HY57V648020 - 8Mx8 bit Synchronous DRAM Series
(9 views)
Hynix Semiconductor
HY57V658010 - 8Mx8 bit Synchronous DRAM Series
(9 views)
Hynix Semiconductor
HY57V658020 - 8Mx8 bit Synchronous DRAM Series
(9 views)
Hynix Semiconductor
HY27SF161G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(9 views)
ETC
AS4LC8M8S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 wor
(8 views)
