8N20 Datasheet | Specifications & PDF Download

MT28N20A N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 28A 200V 85mΩ 52nC  DC/DC    APPLICAT

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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Philips Semiconductors Product specification PowerMOS transistor PHP18N20E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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isc N-Channel MOSFET Transistor IRFB38N20D，IIRFB38N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤54mΩ ·Enhancement mode ·Fast Switching

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www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXF

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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PROVISIONAL PD - 97001A SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free IRFB38N20DPbF IRFS38N20DPbF I

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High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data

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Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-res

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt

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Philips Semiconductors Product specification PowerMOS transistor PHP8N20E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Tes

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AP18N20GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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AP18N20GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics

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