8N20 Datasheet | Specifications & PDF Download

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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MT28N20A N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 28A 200V 85mΩ 52nC  DC/DC    APPLICAT

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1

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Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Public IPTC068N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) •

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IPB068N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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Advanced Power Electronics Corp. AP18N20GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requir

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-res

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Li-ION/POLYMER 1CELL PROTECTOR R5475N/R5478N SERIES No. EA-291-121009 OUTLINE The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection

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MOSFET – N-Channel, UniFETt, FRFET) 200 V, 18 A, 140 mW FDPF18N20FT, FDP18N20F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA18N20H，TMP18N20H Wuxi Unigroup Microelectronics Company 200V N-Chann

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isc N-Channel MOSFET Transistor IRFB38N20D，IIRFB38N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤54mΩ ·Enhancement mode ·Fast Switching

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TSF18N20M TSF18N20M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET FDP18N20F / FDPF18N20FT N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 mΩ November 201

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