IXFR58N20Q HiPerFET Power MOSFETs

IXYS Corporation

Description

HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt .

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Datasheet Specifications

Part number: IXFR58N20Q
Manufacturer: IXYS Corporation
File Size: 111.86 KB
Datasheet: IXFR58N20Q_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs

Features

* z 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 z z z z Weight z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V z z z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 29A Note 2 TJ = 25°C TJ = 125°C 4.0 V ±100 nA

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IXFR58N20Q HiPerFET Power MOSFETs IXYS Corporation

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