IXFR58N20Q

HiPerFET Power MOSFETs

IXYS Corporation

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Part number:

IXFR58N20Q

Manufacturer:

IXYS Corporation

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111.86 KB

Description:

Hiperfet power mosfets.
HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Cha.
nnel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data .

✔ IXFR58N20Q Features

z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 z z z z Weight z Silicon chip on Direct-Copper-Bond substrate - High power dissipation -

✔ IXFR58N20Q Application

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0

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IXFR58N20Q HiPerFET Power MOSFETs IXYS Corporation

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✔ IXFR58N20Q Features

✔ IXFR58N20Q Application

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