* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFR50N50 Datasheet (75.11 KB)
IXFR50N50
IXYS Corporation
75.11 KB
Power mosfets.
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 .
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