Datasheet Specifications
- Part number
- IXFR55N50F
- Manufacturer
- IXYS Corporation
- File Size
- 499.75 KB
- Datasheet
- IXFR55N50F_IXYSCorporation.pdf
- Description
- HiPerRF Power MOSFET
Description
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFR 55.
Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets z z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(Applications
* z DC-DC converters z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 3 mA 90 mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th)IXFR55N50F Distributors
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