IXFR55N50 Datasheet - IXYS Corporation

IXFR55N50 Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 A trr ≤ 250 ns RDS(on) 100 mΩ 90 mΩ Symbol VDSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS.

IXFR55N50 Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR55N50 Datasheet (75.11 KB)

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Datasheet Details

Part number:

IXFR55N50

Manufacturer:

IXYS Corporation

File Size:

75.11 KB

Description:

Power mosfets.

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