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IXTK68N20

Power MOSFET

IXTK68N20 Features

* • • • • Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Symbol Test Conditions Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA µA mA mΩ (TJ = 25°C unless otherwise specified) VDSS V

IXTK68N20 Datasheet (279.05 KB)

Preview of IXTK68N20 PDF

Datasheet Details

Part number:

IXTK68N20

Manufacturer:

IXYS Corporation

File Size:

279.05 KB

Description:

Power mosfet.
High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data.

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IXTK68N20 Power MOSFET IXYS Corporation

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