* Low RDS Rugged (on) HDMOSTM process polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS
IXTK62N25 Datasheet (583.90 KB)
IXTK62N25
IXYS Corporation
583.90 KB
Power mosfet.
High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 62N25
VDSS =
ID25
=
= RDS(on)
250 V
62 A 35 mΩ
Symbol Test con.
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