IXTK62N25 Datasheet - IXYS Corporation

IXTK62N25 Power MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 62N25 VDSS = ID25 = = RDS(on) 250 V 62 A 35 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TTCC = = 25°C, 25°C pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10.

IXTK62N25 Features

* Low RDS Rugged (on) HDMOSTM process polysilicon gate cell structure

* International standard package

* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS

IXTK62N25 Datasheet (583.90 KB)