IXTK62N25 Power MOSFET

IXYS Corporation

Description

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 62N25 VDSS = ID25 = = RDS(on) 250 V 62 A 35 mΩ Symbol Test con.

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Datasheet Specifications

Part number: IXTK62N25
Manufacturer: IXYS Corporation
File Size: 583.90 KB
Datasheet: IXTK62N25_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Low RDS Rugged (on) HDMOSTM process polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS

Applications

* Motor controls
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density DS98877D(05/04) IXTK 62N25 Symbol Test Conditions (TJ = 25°C unless otherwi

IXTK62N25 Distributors

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IXTK62N25 Power MOSFET IXYS Corporation

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