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IXTK62N25 Power MOSFET

IXTK62N25 Description

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 62N25 VDSS = ID25 = = RDS(on) 250 V 62 A 35 mΩ Symbol Test con.

IXTK62N25 Features

* Low RDS Rugged (on) HDMOSTM process polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS

IXTK62N25 Applications

* Motor controls
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density DS98877D(05/04) IXTK 62N25 Symbol Test Conditions (TJ = 25°C unless otherwi

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Datasheet Details

Part number
IXTK62N25
Manufacturer
IXYS Corporation
File Size
583.90 KB
Datasheet
IXTK62N25_IXYSCorporation.pdf
Description
Power MOSFET

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