Datasheet Specifications
- Part number
- IXTK600N04T2
- Manufacturer
- IXYS
- File Size
- 309.19 KB
- Datasheet
- IXTK600N04T2-IXYS.pdf
- Description
- Power MOSFET
Description
Advance Technical Information TrenchT2TM GigaMOS TM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.5mΩ N-Channel Enh.
Features
* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0Applications
* z z z 10 µA 1 mA 1.5 mΩ DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications VGS = 10V, ID = 100A, Notes 1 & 2 © 2009 IXYS CORPORATION, All Rights Reserved DS100209(11/09) http://www. Datasheet4U. com IXTK600N04T2 IXTX600N04T2 Symbol Test Conditions (TJ =IXTK600N04T2 Distributors
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