IXTK600N04T2 Datasheet (IXYS)

IXTK600N04T2, Power MOSFET

Advance Technical Information TrenchT2TM GigaMOS TM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C

IXTK600N04T2 Features

* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0