* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0
IXTK600N04T2 Datasheet (309.19 KB)
IXTK600N04T2
IXYS
309.19 KB
Power mosfet.
Advance Technical Information
TrenchT2TM GigaMOS TM Power MOSFET
IXTK600N04T2 IXTX600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.5mΩ
N-Channel Enh.
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