8N50 Datasheet | Specifications & PDF Download

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m October 2013 Features

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AP38N50MP 500V N-Channel Enhancement Mode MOSFET Description The AP38N50MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Feat

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode pow

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SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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SFX18N50 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semico

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AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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UNISONIC TECHNOLOGIES CO., LTD 8N50 8A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC’s advance

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UNISONIC TECHNOLOGIES CO., LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N50 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Volta

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www.DataSheet.co.kr FTP08N50/FTA08N50 500V N MOS ¾ ¾ ¾ ¾ ¾ (33nC) 100% RoHS/ BVDSS 500V RDS(ON) (Max.) 0.9Ω ID 8.0A ¾ ¾ ¾ ¾ / FTP08N5

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UNISONIC TECHNOLOGIES CO., LTD 8N50H 8A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 8N50H is an N-channel mode power MOSFET usin

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FDP18N50 / FDPF18N50 500V N-Channel MOSFET April 2007 FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

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FDA28N50 — N-Channel UniFETTM MOSFET FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features • RDS(on) = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14

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8N50F N-Channel Enhancement Mode Power MOSFET Description The 8N50F uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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