8N60F Datasheet | Specifications & PDF Download

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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SVF18N60F_Datasheet 18A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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SEMICONDUCTOR TECHNICAL DATA KPM8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristic

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www.DataSheet.co.kr SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effec

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Silicon N-Channel Power MOSFET CS8N60F A9H ○R General Description： CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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QM08N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM08N60F is the highest performance N-ch MOSFETs with extre

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Silicon N-Channel Power MOSFET CS8N60F A9D ○R General Description： CS8N60F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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SCT08N60FD Triac 600V, 8A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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SEMICONDUCTOR TECHNICAL DATA KPS8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristi

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SEMICONDUCTOR TECHNICAL DATA KP8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristic

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CSD18503KCS www.ti.com SLPS368 – SEPTEMBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503KCS 1 FEATURES Ultra Low Qg and Qgd

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