8NM60 Datasheet | Specifications & PDF Download

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datash

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STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5N

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UNISONIC TECHNOLOGIES CO., LTD 18NM60 Power MOSFET 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18NM60 uses UTC’s advanced proprietary, p

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STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5N

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isc N-Channel MOSFET Transistor STD8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 p

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW48NM60N ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanc

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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, T

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isc N-Channel MOSFET Transistor STF8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor STP8NM60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Re

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UNISONIC TECHNOLOGIES CO., LTD 8NM60-U2 8A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 8NM60-U2 is a Super Junction MOSFET Structure a

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STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5N

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STE48NM60 N-CHANNEL 600V - 0.09Ω - 48A ISOTOP MDmesh™Power MOSFET TYPE STE48NM60 VDSS 600V RDS(on) < 0.11Ω ID 48 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt

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STL18NM60N N-channel 600 V, 0.26 Ω typ., 12 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 6  6 

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STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features Type STD8NM

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STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes STW48NM6

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