Datasheet4U Logo Datasheet4U.com

STP28NM60ND

N-Channel MOSFET

STP28NM60ND Features

* Drain Current

* ID=23A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STP28NM60ND General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STP28NM60ND Datasheet (271.27 KB)

Preview of STP28NM60ND PDF

Datasheet Details

Part number:

STP28NM60ND

Manufacturer:

INCHANGE

File Size:

271.27 KB

Description:

N-channel mosfet.

📁 Related Datasheet

STP28NM60ND N-Channel MOSFET (STMicroelectronics)

STP28NM50N N-Channel Power MOSFET (ST Microelectronics)

STP28NM50N N-Channel MOSFET (INCHANGE)

STP28N60DM2 N-channel Power MOSFET (STMicroelectronics)

STP28N60M2 N-CHANNEL POWER MOSFET (STMicroelectronics)

STP28N65M2 N-channel Power MOSFET (STMicroelectronics)

STP200N3LL N-CHANNEL POWER MOSFET (STMicroelectronics)

STP200N4F3 N-channel Power MOSFET (STMicroelectronics)

STP200N6F3 Power MOSFETs (ST Microelectronics)

STP200NF03 N-CHANNEL POWER MOSFET (ST Microelectronics)

TAGS

STP28NM60ND N-Channel MOSFET INCHANGE

Image Gallery

STP28NM60ND Datasheet Preview Page 2

STP28NM60ND Distributor